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Dr. Ibrahim Alghoraibi
Journal of Advanced Material Science and Innovations
Editor Name: Dr. Ibrahim Alghoraibi
Country: Syria
University: Damascus University
Educational Qualification: Ph.D. degree in Physics & Nanotechnology
Designation: Physics Assistant Professor
Department: Nanotechnology & Physics Department
Email:Â i.alghoraibi@damasuniv.edu.sy
Research Interest:Â
• Nanomaterial, thin films deposition and characterization, Electrical, magnetic and optical properties of nano thin films, Industrial application of thin film coatings.
• Surface studies using different techniques like Auger , XPS electron spectroscopies, Low electron energy diffraction, Surface roughness study using Atomic force Microscopy and optical methods like UV, PL, EL....etc
• Study and fabrication of gas sensors based on metal oxides, porous silicon and carbon nanostructures and hybrids.
• Fabrication of solar cells based on CdS/CdTe , CuInSe2/CdS/ZnO
• Nano particles formation using pulse laser ablation and arc discharge method.
• Nanofibre formation using electrospinning technique
• Electrospun fibers and composites for tissue engineering applications, Micro-Ultra-Nano-RO-Filtration and  Purification of water.
• Polymer fibers for multifunctional applications.
• Self-cleaning, superhydrophobic and superhydrophilic materials
• Quantum dots elaboration using Epitaxy.
• Sol-Gel, Wet chemistry and chemical bath (solution) deposition.
• Nano Material & Devices: Nanosensors, CNT.
• Synthesis of Nano-Silver Colloids (Metallic Nanoparticles)
• Application of Silver Nanoparticles and Nanofibers in Drinking Water Purification
• Application of nanotechnology in medical:
• Anti-Microbial, Anti-Bacterial and Anti-Fungal
• Dental Materials Scaffolds
• Scaffolds for teeth tissue engineering
• Nanostructure Scaffolds for tissue engineering
• Drug delivery
• Nano-biopolymeric fibers in wound healing
• Wound dressing.
BIOGRAPHY:Â
Prof. Ibrahim Alghoraibi, Physics Assistant Professor at Damascus University (Syria). He obtained his Ph.D. degree in Physics & Nanotechnology from Institut National des Sciences Appliquées/ INSA, Rennes (France). He is the leader of the nanotechnology activity of Physics Department. He is chief of Syrian Nanoscience & Technology Initiative Community (SNIC) and he is head of unit Nanotechnology in department of physics, university of Damascus. His current research activity focuses on the fabrication of nanostructure materials for applications in multifunctional, nano-semiconductor laser, coating, sensing, photocatalytic applications, solar cells, Nano filtration and Purification of water. Currently, Alghoraibi is on the editorial board of peer-reviewed journals (American Journal of Nanosciences, Nanoscience & Technology: Open Access, Frontiers in Nanotechnology, Advances in Biomedicine and Pharmacy, Journal of Orthodontics & Endodontics, Modern Approaches in Oceanography and Petrochemical Sciences, Biomedical Research: Current Trends, An International Journal of Biomedicine, Natural Products and Pharmacy, Iranian Journal of Chemistry and Chemical Engineering, Archives of Organic and Inorganic Chemical Sciences and Organic & Medicinal Chemistry International Journal). An author and a co-author of about 42 papers in several international journals and he is participate in about 41 international conferences.
PUBLICATIONS:
1. Alghoraibi, L. Joulaud, C. Paranthoen, A. Le Corre, O. Dehaese, N. Bertru, H. Folliot, P. Caroff, S.Loualiche, “InAs self-assembled quantum dot and quantum dash lasers on InP for 1,55 μm optical telecommunicationsâ€. IEEE, vol. 2, p. 2085-2090 (2006).Â
2. Alghoraibi, T. Rohel, N. Bertru, A. Le Corre, A. Létoublon, P. Caroff, O. Dehaese, and S. Loualiche, “Self-assembled InAs quantum dots grown on InP (311)B substrates : Role of buffer layer and amount of InAs depositedâ€. J. Crystal Growth, vol. 293, p. 263-268 (2006).Â
3. Alghoraibi, T. Rohel, R. Piron, N. Bertru, C. Paranthoen, G. Elias, A. Nakkar, H. Folliot, A. Le Corre, and S. Loualiche. “Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substratesâ€. Appl. Pys. Lett, 91, p. 261105 (2007).Â
4. Alghoraibi, T. Rohel, R. Piron, N. Bertru, C. Paranthoen, G. Elias, A. Nakkar, H. Folliot, A. Le Corre, and S. Loualiche. “Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substratesâ€. IEEE, p. 1-5 (2008).Â
5. P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot and S. Loualiche, “Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 μmâ€. Jpn. J. Appl. Phys, vol. 44 L 1069(2005).Â
6. F. Doré, A. Ballestar, C. Cornet, N. Bertru, O. Dehaese, I. Alghoraibi, R. Piron, J. Even and S. Loualiche “Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5 μm)â€, Journal de Physique IV: The European Physical Journal (EPJ), vol. 135, 283-4 (2005).Â
7. F. Doré, C. Cornet, A. Schliwa, A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre, and S. Loualiche, “InAsSb/InGaAs quantum nanostructures on InP (100) substrate : observation of 2,35 μm photoluminescenceâ€, Physica status solidi(c) 3, 524 (2006).Â
8. F. Doré1, A. Ballestar1, C. Cornet1, N. Bertru1, I. Alghoraibi1, R. Piron1, J. Even1 et S. Loualiche1, “Structures à îlots quantiques sur substrat InP(100) pour l’émission dans le moyen infrarouge (2−5 μm)â€, J. Phys. IV France, vol. 135, p. 283–284 (2006).Â
CONFERENCES INTERNATIONALS:Â
1. I. Alghoraibi, L. Joulaud, C. Paranthoen, A. Le Corre, O. Dehaese, N. Bertru, H. Folliot, P. Caroff, S.Loualiche, “InAs self-assembled quantum dot and quantum dash lasers on InP for 1,55 μm optical telecommunicationsâ€. Second International Conference on Information and Communication Technologies, 2006. ICTTA '06. 2nd, Damascus, Syria, (oral) 24-28 April, (2006).Â
2. Alghoraibi, L. Joulaud, C. Paranthoen, A. Le Corre, O. Dehaese, N. Bertru et S. Loualiche. “Self-Organization in Growth of InAs quantum dot and quantum dash lasers on InP for 1,55 μm optical telecommunicationsâ€. in Workshop on laser science and applications, Damascus, Syria, (oral), 13-15 November, (2006).Â
3. Alghoraibi, T. Rohel, R. Piron, A. Nakkar, H. Folliot, N. Bertru, A. L. Corre et S. Loualiche “InAs/InP quantum dots laser grown on (311)B substrates with AlGaInAs barriers†à LWQD,2007 : International Workshop on Long Wavelength Quantum Dots : Growth and Applications, Rennes, France, (Poster), 5-6 juil., (2007).Â
4. I.Alghoraibi, T. Rohel, R. Piron, N. Bertru, C. Paranthoen, G. Elias, A. Nakkar, H. Folliot, A. Le Corre, S. Loualiche. “Temperature Dependence of Threshold Current of InAs/AlGaInAs/InP Quantum Dot Laserâ€, in SQDA : International Workshop on Semiconductor Quantum Dot Devices and Applications, Rennes, France, (Poster), 7-8 juil, (2008).Â
5. Alghoraibi, T. Rohel, R. Piron, N. Bertru, C. Paranthoen, G. Elias, A. Nakkar, H. Folliot, A. Le Corre, and S. Loualiche. “Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substratesâ€. 3rd International Conference on Information and Communication Technologies, (ICTTA '08 3rd), Damascus, Syria, (oral), 7-11 April, (2008).Â
6. N. Bertru, I. Alghoraibi, P. Caroff, C. Paranthoen, H. Folliot, and A. Le Corre, “Low threshold current density (311)B QD lasersâ€, in Sixth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces, United Kingdom, Nottingham, (2006).Â
7. C. Cornet, O. Dehaese, L. Pedesseau, I. Alghoraibi, T. Rohel, A. Létoublon, J. Even, N. Bertru, A. Le Corre and S. Loualiche. “Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum†in Euro-MBE, Sierra Nevada, Granada, Spain. (oral), 5-7 Mars, (2007).Â
8. F. Doré, C. Cornet, P. Caroff, A. Schliwa, A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre, and S. Loualiche, “InAsSb/InGaAs quantum nanostructures on InP (100) substrate : observation of 2.35 microns photoluminescenceâ€, in International Symposium on Compound Semiconductors 32nd, Europa-park, Germany, 18 - 22 septembre, (2005).Â
9. F. Doré, C. Cornet, P. Caroff, A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, R. Piron, H. Folliot, A. Le Corre, and S. Loualiche. “First observation of lamda greater than 2 micron photoluminescence of quantum dots on InP substrateâ€. in MIOMD-VII, Mid-infrared Optoelectronics: Materials and Devices, Lancaster, UK, 12-14 septembre, (2005).
10. F. Doré, C. Cornet, A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre, and S. Loualiche, “First observation of 2.4 μm photoluminescence of InAsSb/InP quantum dots on InP(100) substrateâ€, in NGS12: 12th International Conference on Narrow Gap Semiconductors, Toulouse, France, 3 – 7 juillet, (2005).
11. F. Doré, C. Cornet, A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre, and S. Loualiche, “First observation of 2.4 microns photoluminescence of InAsSb/InP quantum dots on InP substrateâ€, in 4th International Conference on Quantum Dots, Chamonix-Mont Blanc, France, (2006).
12. F. Doré, J. Even, C. Cornet, A. Schliwa, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre, and S. Loualiche, “A theoretical and experimental study of 1-2 μm photoluminescence of quantum dots on InP substrateâ€, in ICPS proceeding: International Conference on Physics of Semiconductors, Vienne, Autriche, (2006).
13. F. Doré, C. Cornet, P. Caroff, I. Alghoraibi, A. Ballestar,C. Labbe, R. Piron, O. Dehaese, J. Even and S. Loualiche “InAs(Sb)/InP quantum dots for mid-infrared emitters : comparison of InP(100) and InP(311)B†in IWSQDA, 2006: International Workshop on Semiconductor Quantum Dot Based Devices and Applications, Paris, France, 16-17 mars, (2006).
14. G. Elias, A. Létoublon, P. Caroff, I. Alghoraibi, C. Cornet, A. Le Corre, A. Ponchet, O. Dehaese, N. Bertru. “Study of InAs/InP (311)B stacked quantum dots for laser emission at 1,55 μm†in LWQD, 2007: International Workshop on Long Wavelength Quantum Dots: Growth and Applications, Rennes, France, (Poster), 5-6 Juil, (2007).
15. Nakkar, H. Folliot, A. Le Corre, I. Alghoraibi, C. Labbé, J.-M. Lamy, C. Cornet et S. Loualiche. “Optical properties and morphology of the quantum dots InAs/InP (311)B characterized by photoluminescence†à LWQD : International Workshop on Long Wavelength Quantum Dots: Growth and Applications, Rennes, France, (Poster), 5-6 Juil, (2007).
16. G.Elias , N. Bertu, A. Le Corre, A. Letoublon I. Alghoraibi, A.Nakkar, N,Chevalier, H.Folliot, S.Loualiche. “Self-organized growth of InAs quantum dots on InP(001)†in SQDA, 2008: International Workshop on Semiconductor Quantum Dot Devices and Applications, Rennes, France, (oral), 7-8 juil, (2008).
17. G.Elias, A. Letoublon, R. Piron, I. Algoraibi, K. Tavernier, N. Chevalier, N. Bertru, A. Le Corre, S. Loualiche “Improvement of 1.55 μm InAs QD laser using vicinal (001)InP substrate†in IEEE IPRM proceeding: International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, USA, (oral), 10 - 14 May (2009)
For More articles:
ResearchGate: https://www.researchgate.net/profile/Ibrahim_Alghoraibi3Â
Google Scholar: https://scholar.google.fr/citations?user=P
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